SAMSUNG 4TB SSD 860 EVO, 550MB/s Read, 520MB/s Write, V-NAND Technology, SATA III 2.5 inch, MZ-76E4T0BW
- SAMSUNG 4TB SSD 860 EVO,
- 550MB/s Read,
- 520MB/s Write,
- V-NAND Technology,
- SATA III 2.5 inch,
- MZ-76E4T0BW
-
Key Features
Sequential Read Speed
Up to 550 MB/s Sequential Read * Performance may vary based on system hardware & configuration
Sequential Write Speed
Up to 520 MB/s Sequential Write * Performance may vary based on system hardware & configuration
Random Read Speed
Random Read (4KB, QD32): Up to 98,000 IOPS Random Read Random Read (4KB, QD1): Up to 10,000 IOPS Random Read
* Performance may vary based on system hardware & configurationRandom Write Speed
Random Write (4KB, QD32): Up to 90,000 IOPS Random Write Random Write (4KB, QD1): Up to 42,000 IOPS Random Write
* Performance may vary based on system hardware & configurationController
Samsung MJX Controller
NAND Type
Samsung V-NAND 3bit MLC
Cache Memory
Samsung 4 GB Low Power DDR4 SDRAM
Trim Support
Yes
AES Encryption
AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
S.M.A.R.T. Support
Yes
GC (Garbage Collection)
Auto Garbage Collection Algorithm
WWN Support
World Wide Name supported
Device Sleep Mode Support
Yes
Internal Storage
Yes
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General
Power Consumption (W)
*Average: 3.0 W
*Maximum: 4.0 W (Burst mode)
* Actual power consumption may vary depending on system hardware & configurationReliability (MTBF)
1.5 Million Hours Reliability (MTBF)
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Environmental Specs
Operating Temperature
0 – 70 ℃ Operating Temperature
Shock
1,500G & 0.5ms (Half sine)
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Form Factor
Product
2.5″ SATA III
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Dimensions (W x H x D)
Product
3.94″ X 2.76″ X 0.27″
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Weight
Product
0.21 lbs.
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Software
Management SW
Magician Software for SSD management